| Title |
A Study on the Experimental Fabrication and Analysis of MOS Photovoltaic Solar Energy Conversion Device |
| Authors |
Ko, Gi-Man(Ko, Gi-Man) ; Park, Sung-Hui(Park, Sung-Hui) ; Sung, Man-Young(Sung, Man-Young) |
| Abstract |
MOS silicon solar cells have been developed using the fixed (interface) charge inherent to thermally oxidized silicon to induce an n-type inversion layer in 1-10 ohm-cm p-type silicon. Higher collection efficiencies are predicted than for diffused junction cells. Without special precautions a conversion efficiency of 14.2% is obtained. A MOS silicon solar cell is described in which an inversion layer forms the active area which is then contacted by means of a MOS grid. The highest efficiency is obtained when the resistivity of the substrate is high. |