| Title |
Simulation of electron tunneling time through a potential barrier |
| Authors |
이욱(Lee, Wook) ; 이병호(Lee, Byoung-Ho) |
| Abstract |
Simulated electron tunneling time through a potential barrier is compared with theoretical phase time. For a GaAs/Al/sub 0.3/Ga/sub 0.7/As/GaAs potential barrier with 300 meV height and 3 nm or 5 nm width, simulations are performed with various average electron energies and momentum deviations. The simulation results become closer to the theoretical phase time as the average electron energy decreases and as the momentum deviation decreases. It is also shown that a barrier, which is due to the peak spectrum shift in the momentum space after tunneling. (author). refs., figs. |