| Title |
Macro-model for Estimation of Maximum Power Dissipation of CMOS Digital Gates |
| Keywords |
maximum power estimation ; macro model ; MOSFET characteristics ; CMOS logic gate ; relative error rate |
| Abstract |
As the integration ratio and operation speed increase, it has become an important problem to estimate the dissipated power during the design procedure as a method to reduce the TTM(time to market). This paper proposed a prediction model to estimate the maximum dissipated power of a CMOS logic gate. This model uses a calculational method. It was formed by including the characteristics of MOSFETs of which a CMOS gate consists, the operational characteristics of the gate, and the characteristics of the input signals. As the modeling process, a maximum power estimation model for CMOS inverter was formed first, and then a conversion model to convert a multiple input CMOS gate into a corresponding CMOS inverter was proposed. Finally, the power model for inverter was applied to the converted result so that the model could be applied to a general CMOS gate. For experiment, several CMOS gates were designed in layout level by 0.6μm layout design rule. The result by comparing the calculated results with those from HSPICE simulations for the gates showed that the gate conversion model has within 5% of the relative error rate to the SPICE and the maximum power estimation model has within 10% of the relative error rate. Thus, the proposed models have sufficient accuracies. Also in calculation time, the proposed models was more than 30 times faster than SPICE simulation. Consequently, it can be said that the proposed model could be used efficiently to estimate the maximum dissipated power of a CMOS logic gate during the design procedure. |