| Title |
The Effects of the Drive-in Process Parameters on the Residual Stress Profile of the p^+ Silicon Thin Film |
| Authors |
정옥찬(Jeong, Ok-Chan) ; 박태규(Park, Tae-Gyu) ; 양상식(Yang, Sang-Sik) |
| Keywords |
p^+ silicon film ; Residual stress profile ; Cantilevers ; Rotating beam |
| Abstract |
The paper represents the effects of the drive-in process parameters on the residual stress profile of the p^+ silicon film. Since the residual stress profile is notuniform along the direction normal to the surface, the residual stress is assumed to be a polynomial function of the depth. All the coefficients of the polynomial can be determined by measuring of the thicknesses and the deflections of cantilevers and the deflection of a rotating beam with a surface profiler meter and a microscope. As the drive-in temperature or the drive-in time increases, the boron concentration decreases and the magnitude of the average residual tensile stress decreases. Then, near the surface of the p^+ film the residual tensile stress is transformed into the residual compressive stress and its magnitude increases. |