Title |
Si-to-Si Electrostatic Bonding using LSG Film as an Interlayer |
Authors |
주병권(Ju, Byeong-Gwon) ; 정지원(Jeong, Ji-Won) ; 이덕중(Lee, Deok-Jung) ; 이윤희(Lee, Yun-Hui) ; 최두진(Choe, Du-Jin) ; 오명환(O, Myeong-Hwan) |
Keywords |
Si-Si bonding ; electrostatic bonding ; LSG interlayer ; MEMS |
Abstract |
Si-to-Si electrostatic bonding was carried out by employing LSG interlayer instead of conventional Corning #7740 interlayer in order to improve bonding properties. The surface roughness and dielectric breakdown field of the LSG interlayers deposited on Si substrates were investigated. Also, the bonding interface, bonding strength and bonding mechanism were discussed for the electrostatically-bonded Si-Si wafer pairs having LSG interlayers. |