| Title |
Temperature Monitoring System of Power MOSFET for IPCM |
| Authors |
최낙권(Choi Nak-Gwon) ; 김기현(Kim Ki-Hyun) ; 김형우(Kim Hyoung-Woo) ; 서길수(Seo Kil-Soo) ; 김남균(Kim Nam-Kun) |
| Keywords |
IPM ; Temperature Monitoring ; Over Temperature Protection ; MOSFET |
| Abstract |
We suggest a novel temperature detection method utilized in temperature monitoring system. Suggested method detects temperature variation by using R_{ds(on)} characteristics of MOSFET, while conventional methods are using extra devices such as a temperature sensor or an over-temperature detection transistor. For voltage detection between drain and source, 10 bits resolution ADC is needed. Therefore possible measurement signal range is about ten mV. If detected temperature's voltage exceed protection temperature's voltage then controller generates OT (Over Temperature) signal to stop MOSFET's trigger signal. Whole process of measurement is controlled by software. Experimental results show that the developed temperature monitoring system can provide the suitable temperature monitoring method and difference between detected and data sheet value of the suggested system is about 3 %. |