| Title |
Hysteresis Phenomenon of Hydrogenated Amorphous Silicon Thin Film Transistors for an Active Matrix Organic Light Emitting Diode |
| Authors |
최성환(Choi, Sung-Hwan) ; 이재훈(Lee, Jae-Hoon) ; 신광섭(Shin, Kwang-Sub) ; 박중현(Park, Joong-Hyun) ; 신희선(Shin, Hee-Sun) ; 한민구(Han, Min-Koo) |
| Keywords |
a-Si:H TFT ; OLED ; Hysteresis Phenomenon |
| Abstract |
We have investigated the hysteresis phenomenon of a hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and analyzed the effect of hysteresis phenomenon when a-Si:H TFT is a pixel element of active matrix organic light emitting diode (AMOLED). When a-Si:H TFT is addressed to different starting gate voltages, such as 10V and 5V, the measured transfer characteristics with 1uA at V_{DS} = 10V shows that the gate voltage shift of 0.15V is occurred due to the different quantities of trapped charge. When the step gate-voltage in the transfer curve is decreased from 0.5V to 0.05V, the gate-voltage shift is decreased from 0.78V to 0.39V due to the change of charge do-trapping rate. The measured OLED current in the widely used 2-TFT pixel show that a gate-voltage of TFT in the previous frame can influence OLED current in the present frame by 35% due to the change of interface trap density induced by different starting gate voltages. |