| Title |
Electrical Conduction Mechanism of AIN Insulator thin Film Fabricated by Reactive Sputtering Method for the Application of MIS Device |
| Authors |
박정철(Park, Jung-Cheul) ; 권정열(Kwon, Jung-Youl) ; 이헌용(Lee, Heon-Yong) ; 추순남(Chu, Soon-Nam) |
| Keywords |
AIN thin film ; leakage current ; Poole-Frenkel conduction mechanism |
| Abstract |
We have studied the variable conditions of reactive sputtering to prepare AM thin film. The leakage current showed below 10^{-9}A/cm^2 at the deposition temperature of 250°C and 300°C in the field of 0.1 MV/cm, and it was gradually increased and to be saturated in 0.2 MV/cm. The C-V characteristics of the above mentioned deposition temperature conditions showed a deep depletion phenomenon at inversion region. The C-V characteristics showed similarly under the DC power conditions of 100 and 150 W but were degraded at 200W. When the DC power was 100, 200, and 300 W the dielectric breakdown phenomenon was shown in 2.8, 3.2 and 5.2 MV/cm, respectively. It was found that AIN film was dominated by Poole-Frenkel conduction mechanism. |