| Title |
Breakdown and Destruction Characteristics of the CMOS IC by High Power Microwave |
| Authors |
홍주일(Hong, Joo-Il) ; 황선묵(Hwang, Sun-Mook) ; 허창수(Huh, Chang-Su) |
| Keywords |
High power microwave ; semiconductor ; breakdown ; destruction |
| Abstract |
We investigated the damage of the CMOS IC which manufactured three different technologies by high power microwave. The tests separated the two methods in accordance with the types of the CMOS IC located inner waveguide. The only CMOS IC which was located inner waveguide was occurred breakdown below the max electric field (23.94kV/m) without destruction but the CMOS IC which was connected IC to line organically was located inner waveguide and it was occurred breakdown and destruction below the max electric field. Also destructed CMOS IC was removed their surface and a chip condition was analyzed by SEM. The SEM analysis of the damaged devices showed onchuipwire and bondwire destruction like melting due to thermal effect. The tested results are applied to the fundamental data which interprets the combination mechanism of the semiconductors from artificial electromagnetic wave environment and are applied to the data which understand electromagnetic wave effects of electronic equipments. |