| Title |
Structural, Optical and Electrical Properties of AI Doped ZnO Thin Films Prepared by Nd:YAG-PLD Technology |
| Authors |
노임준(No, Im-Jun) ; 임재성(Lim, Jae-Sung) ; 이천(Lee, Cheon) ; 신백균(Shin, Paik-Kyun) |
| Keywords |
Pulsed Laser Deposition ; Aluminum Doped Zinc Oxide ; Transparent Conductive Oxide |
| Abstract |
Aluminum doped zinc oxide (AZO) thin films were deposited on coming glass substrates using an Nd:YAG pulsed laser deposition technology. The AZO thin films were deposited with various growth conditions such as the substrate temperature and oxygen partial pressure. In this work, we used various measurement technologies in order to investigate the electrical, structural, and optical properties of the AZO thin films. Among the AZO thin films, the one prepared at the substrate temperature of 300°C and oxygen partial pressure of 5 mTorr showed the best properties of an electrical resistivity of 4.63×10^{-4}{Ω}·cm, a carrier concentration of 9.25×10^{20}cm^{-3}, and a carrier mobility of 31.33cm^2/V·s. All the AZO thin films showed an high average optical transmittance over 90 % in visible region. |