| Title |
Approximate Equations and Sensitivity for Breakdown Voltages of Cylindrical PN Junctions in Power Semiconductor Devices |
| Authors |
윤준호(Yun, Jun-Ho) ; 김해미(Kim, Hae-Mi) ; 서현석(Seo, Hyeon-Seok) ; 조중열(Jo, Jung-Yol) ; 최연익(Choi, Yearn-Ik) |
| Keywords |
Breakdown Voltage ; Cylindrical PN Junction ; Sensitivity ; Junction Depth ; Power Semiconductor Devices |
| Abstract |
Approximate equations for cylindrical breakdown voltages of planar pn junctions are proposed and verified. The equations show good agreement with the Baliga's results for r_{j}/Wpp{≤q}0.3 and with numerical results for r_{j}/Wpp{ geqq}0.3 within 1% error. Sensitivity of the breakdown voltage with respect to the doping concentrations is successfully derived using the approximate equations. The sensitivity formula can be utilized in the area of tolerance design of power semiconductor devices. |