| Title |
The Characteristics and Technical Trends of Power MOSFET |
| Authors |
배진용(Bae, Jin-Yong) ; 김용(Kim, Yong) |
| Keywords |
Power MOSFET ; Switching Characteristic ; Finger Gate ; Trench Array ; Super Junction Structure ; SiC Transistor |
| Abstract |
This paper reviews the characteristics and technical trends in Power MOSFET technology that are leading to improvements in power loss for power electronic system. The silicon bipolar power transistor has been displaced by silicon power MOSFET's in low and high voltage system. The power electronic technology requires the marriage of power device technology with MOS-gated device and bipolar analog circuits. The technology challenges involved in combining power handling capability with finger gate, trench array, super junction structure, and SiC transistor are described, together with examples of solutions for telecommunications, motor control, and switch mode power supplies. |