| Title |
Precision Measurement of Silicon Wafer Resistivity Using Single-Configuration Four-Point Probe Method |
| Authors |
강전홍(Kang, Jeon-Hong) ; 유광민(Yu, Kwang-Min) ; 구경완(Koo, Kung-Wan) ; 한상옥(Han, Sang-Ok) |
| DOI |
https://doi.org/10.5370/KIEE.2011.60.7.1434 |
| Keywords |
Four-point probe method ; Single-configuration ; Col-linear four point probe ; Resistivity ; Sheet resistance ; Silicon wafer ; Accuracy ; Uncertainty |
| Abstract |
Precision measurement of silicon wafer resistivity has been using single-configuration Four-Point Probe(FPP) method. This FPP method have to applying sample size, shape and thickness correction factor for a probe pin spacing to precision measurement of silicon wafer. The deference for resistivity measurement values applied correction factor and not applied correction factor was about 1.0 % deviation. The sample size, shape and thickness correction factor for a probe pin spacing have an effects on precision measurement for resistivity of silicon wafer. |