| Title |
Design and Implementation of an Optimal Hardware for a Stable Operating of Wide Bandgap Devices |
| Authors |
김동식(Kim, Dong-Sik) ; 주동명(Joo, Dong-Myoung) ; 이병국(Lee, Byoung-Kuk) ; 김종수(Kim, Jong-Soo) |
| DOI |
https://doi.org/10.5370/KIEE.2016.65.1.88 |
| Keywords |
Wide bandgap device ; GaN FET ; Hardware design ; Stray inductance ; Faulty turn-on |
| Abstract |
In this paper, the GaN FET based phase-shift full-bridge dc-dc converter design is implemented. Switch characteristics of GaN FET were analyzed in detail by comparing state-of-the-art Si MOSFET. Owing to the low conduction resistance and parasitic capacitance, it is expected to GaN FET based power conversion system has improved performance. However, GaN FET is vulnerable to electric interference due to the relatively low threshold voltage and fast switching transient. Therefore, it is necessary to consider PCB layout to design GaN FET based power system because PCB layout is the main reason of stray inductance. To reduce the electric noise, gate voltage of GaN FET is analyzed according to operation mode of phase-shift full-bridge dc-dc converter. Two 600W phase-shifted full-bridge dc-dc converter are designed based on the result to evaluate effects of stray inductance. |