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Mobile QR Code QR CODE : The Transactions of the Korean Institute of Electrical Engineers
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Title A Novel Hydrogen-reduced P-type Amorphous Silicon Oxide Buffer Layer for Highly Efficient Amorphous Silicon Thin Film Solar Cells
Authors 강동원(Kang, Dong-Won)
DOI https://doi.org/10.5370/KIEE.2016.65.10.1702
Page pp.1702-1705
ISSN 1975-8359
Keywords Amorphous silicon oxide ; Hydrogen ; TiO_2 ; Buffer ; Thin film solar cell
Abstract We propose a novel hydrogen-reduced p-type amorphous silicon oxide buffer layer between TiO_2 antireflection layer and p-type silicon window layer of silicon thin film solar cells. This new buffer layer can protect underlying the TiO_2 by suppressing hydrogen plasma, which could be made by excluding H_2 gas introduction during plasma deposition. Amorphous silicon oxide thin film solar cells with employing the new buffer layer exhibited better conversion efficiency (8.10 %) compared with the standard cell (7.88 %) without the buffer layer. This new buffer layer can be processed in the same p-chamber with in-situ mode before depositing main p-type amorphous silicon oxide window layer. Comparing with state-of-the-art buffer layer of AZO/p-nc-SiOx:H, our new buffer layer can be processed with cost-effective, much simple process based on similar device performances.