| Title |
Numerical Simulation for Forward Current?Voltage Characteristics of Diamond MOSFET Using Lombardi Mobility Model |
| Authors |
김태은(Taeeun Kim) ; 이호준(Hojun Lee) ; 신승일(Seung-Il Shin) ; 하민우(Min-Woo Ha) |
| DOI |
https://doi.org/10.5370/KIEE.2020.69.8.1221 |
| Keywords |
Diamond; MOSFET; Mobility; Lombardi; Scattering; On current |
| Abstract |
Diamond semiconductor technologies are suitable for power devices due to high breakdown field and high thermal conductivity. The scattering is important because it reduced the mobility and limited the on current. Here, we present numerical simulations of a p-type diamond MOSFET using Lombardi mobility model which considered the phonon, surface roughness, and Coulomb scattering-dependent hole mobility. We designed a hydrogen terminated diamond MOSFET which had the p-type diamond layer and ? two-dimensional hole gas(2DHG) channel. When the gate source and drain source voltage were -1 and -10 V, respectively, the on ? ? current with surface roughness, Coulomb, and phonon scattering were 355, 355, and 133 mA/mm, respectively. The phonon scattering by the electric field was the most dominant factor which decreased the hole mobility. The reduction in the hole mobility occurred considerably beneath the gate oxide near drain edge where the electric field concentrated. |