| Title |
Analysis of Selective Emitter Formation Technology of n-TOPCon Solar Cell |
| Authors |
정성진(Sungjin Jeong) ; 차예원(Yewon Cha) ; 김성헌(Sungheon Kim) ; 김홍래(Hongrae Kim) ; 박소민(Somin Park) ; 김태용(Taeyong Kim) ; 박진주(Jinjoo Park) ; 주민규(Minkyu Ju) ; 이준신(Junsin Yi) |
| DOI |
https://doi.org/10.5370/KIEE.2022.71.1.114 |
| Keywords |
High Efficiency; Selective Emitter; p-PERC; n-TOPCon |
| Abstract |
The main efficiency limiting factors for homogeneous emitter solar cells are resistance loss through metal contact on the front side and recombination loss at the surface. Herein, a selective emitter technology is introduced to solve the above problem, and it is currently commercialized in the mainstream p-PERC (Passivated Emitter Rear Contact) solar cell. The selective emitter boosts efficiency by 0.3~0.4% when compared to a homogeneous emitter, and when applied to the n-TOPCon (Tunnel Oxide Passivated Contact) solar cell, high efficiency of 26% or higher may be predicted. The most widely utilized selective emitter technologies are laser and etch-back. The One-Step Technology, which is suited to the n-TOPCon solar cell process, a laser is suitable for mass manufacturing with high yield. Because selective emitters increase electrical characteristics, which impact cell efficiency, it is required to study and create a technology that is optimal for the n-TOPCon manufacturing process. |