| Title |
Design of 1.2 kV SiC Trench MOSFET for suppression on Electric Field Crowding at Gate Oxide |
| Authors |
박영은(Yeongeun Park) ; 김채윤(Chaeyun Kim) ; 윤효원(Hyowon Yoon) ; 강규혁(Gyuhyeok Kang) ; 김광재(Gwangjae Kim) ; 석오균(Ogyun Seok) |
| DOI |
https://doi.org/10.5370/KIEE.2022.71.11.1646 |
| Keywords |
SiC; Trench MOSFET; Electric field crowding; P-base; P-shielding |
| Abstract |
SiC trench Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has an advantage of a low on-resistance due to a small cell pitch between unit cells, and is widely used for power electronics requiring a high power conversion efficiency. However, there is a electric-field crowding problem at the gate oxide. Since the physical destruction of the gate oxide is irrecoverable, researches of a design that can improve the reliability of the trench MOSFET by suppressing the electric field of the gate oxide are needed. This paper implemented a structure in which p-shielding is added next to a trench and verified its electrical characteristics of 1.2 kV SiC trench MOSFET using Sentaurus TCAD simulation. The result showed that the specific on-resistance of 2.02 mΩ-cm2 was measured and the breakdown voltage was improved from 850 V to 1717 V. |