| Title |
Analysis of the Mechanism of Degradation of p-type Silicon Solar Cell |
| Authors |
차예원(Yewon Cha) ; 정성진(Sungjin Jeong) ; 김성헌(Sungheon Kim) ; 김영국(Youngkuk Kim) ; 이준신(Junsin Yi) |
| DOI |
https://doi.org/10.5370/KIEE.2021.70.8.1181 |
| Keywords |
Degradation; Solar cell; Silicon; LID; LeTID; Removal method |
| Abstract |
Two main factors that limiting the efficiency of the p-type solar cells are LID(Light Induced Degradation) and LeTID(Light and elevated temperature induced degradation). The major cause of LID is the formation of boron-oxygen defects in boron doped silicon.
The LeTID is similar kinds as LID, but also occurs in the dark condition and by the recombination of metals and impurities or the reaction between the hydrogen and arbitrary substance. An overall 7% of LeTID degradation rate occurs over long-term scales.
Unexpectedly, these degradations have been recently found to also arises in high purity materials such as float-zone(Fz-Si) and Czochralski-grown(Cz-Si). The proposed method to reduce these two degradations is to use appropriate firing process and annealing conditions. |