| Title |
Numerical Analysis of Cu Clip and Al Wire Bonding for MOSFET Packaging |
| Authors |
최나연(Na-Yeon Choi) ; 장성욱(Sung-Uk Zhang) |
| DOI |
https://doi.org/10.5370/KIEE.2024.73.2.320 |
| Keywords |
MOSFET; Finite Element Analysis; Thermal Resistance; Clip Bonding Technology |
| Abstract |
The demand for efficient power devices and systems is growing, and this is driving the development of highly efficient, miniaturized power devices and devices. The development of high-efficiency power devices requires better packaging technologies. Cu Clip Bonding is gaining increasing interest as a packaging method for high-performance MOSFETs, replacing traditional Al Wire Bonding due to its low resistance and inductance, high power density, and improved thermal performance. It is important to understand the thermal behavior of Cu Clips. In this study, the thermal characteristics of both Al Wire and Cu Clip bonding methods in TO-220 and TO-247 packages are compared using the finite element method. |