| Title |
Numerical Study of GaN HEMT Devices with Variations in Wire Bonding and Die Bonding Using Finite Element Analysis |
| Authors |
최나연(Na-Yeon Choi) ; 장성욱(Sung-Uk Zhang) |
| DOI |
https://doi.org/10.5370/KIEE.2024.73.8.1351 |
| Keywords |
GaN HEMT; Power Device; Hermetic Package; Finite Element Method; Thermal Resistance |
| Abstract |
The growing demand for wireless communication technology, especially in the field of mobile communications and the expansion of 5G services, is driving the demand for RF devices, one of its core components. An important core technology in wireless communication systems is the communication between base stations and artificial satellites, and between satellites and satellites.
Space environments such as artificial satellites require the utilization of hermetic packages that require high reliability and durability.
Hermetic package refers to the use of metal and ceramic materials to seal the package under vacuum after assembly. Although it is relatively expensive compared to plastic packages, it has been utilized in industries that require high reliability due to its durability, electrical insulation, and power saving. In this study, we utilized finite element analysis to model the situation of hermetic package using GaN HEMT device, which is a popular RF device used in satellite communication, and compared and analyzed the electrical and thermal properties according to voids that may occur at the core of the packaging process and the change of wire thickness process conditions. |