KIEE
The Transactions of
the Korean Institute of Electrical Engineers
KIEE
Contact
Open Access
Monthly
ISSN : 1975-8359 (Print)
ISSN : 2287-4364 (Online)
http://www.tkiee.org/kiee
Mobile QR Code
The Transactions of the Korean Institute of Electrical Engineers
ISO Journal Title
Trans. Korean. Inst. Elect. Eng.
Main Menu
Main Menu
최근호
Current Issue
저널소개
About Journal
논문집
Journal Archive
편집위원회
Editorial Board
윤리강령
Ethics Code
논문투고안내
Instructions to Authors
연락처
Contact Info
논문투고·심사
Submission & Review
Journal Search
Home
Archive
2019-02
(Vol.68 No.02)
10.5370/KIEE.2019.68.2.296
Journal XML
XML
PDF
INFO
REF
References
1
Jo Min Gi, 2018, Effects of substrate bias voltage on GaN power FET characteristics
2
ROHM semiconductor , 2018, ROHM technical report
3
Ahn Jung-Hoon, Lee Byoung-Kuk, Kim Jong-Soo, 2014, Comparative Performance Evaluation of Si MOSFET and GaN FET Power System, KIPE, Vol. 19, No. 3
4
Kim Dong-Sik, Joo Dong-Myoung, Lee Byoung-Kuk, Kim Jong-Soo, 2016, Design and Implementation of an Optimal Hardware for a Stable Operating of Wide Bandgap Devices, KIEE, Vol. 65, No. 1
5
Jeong Jea-Woong, Kim Hyun-Bin, Kim Jong-Soo, Kim Nam-Joon, 2017, A Study on the Efficiency Prediction of Low-Voltage and High-Current dc-dc Converters Using GaN FET-based Synchronous Rectifier, KIPE, Vol. 22, No. 4
6
Kim Minki, Park Youngrak, Park Junbo, Jung DongYun, Jun Chi-Hoon, Ko Sang Choon, 2017, Pulse-Mode Dynamic Ron Measurement of Large-Scale High-Power AlGaN/ GaN HFET, ETRI Journal, Vol. 39, No. 2
7
Park Sae Hee, Seong Ho-Jae, Hyun Seung-Wook, Won Chung-Yuen, 2017. 11, Analysis of Switch Device Losses through Threshold Voltage and Miller Plateau Voltage, KIPE, Vol. 39, No. 2, pp. 133-134
