• 대한전기학회
Mobile QR Code QR CODE : The Transactions of the Korean Institute of Electrical Engineers
  • COPE
  • kcse
  • 한국과학기술단체총연합회
  • 한국학술지인용색인
  • Scopus
  • crossref
  • orcid

References

1 
X. Chen, C. H. Chen, R. Lee, 2018, Fast evaluation of the high-frequency channel noise in nanoscale MOSFETs, IEEE Trans. Electron Devices, Vol. 65, No. 4, pp. 1502-1508DOI
2 
M. J. Deen, 2006, High frequency noise of modern MOSFETs: compact modeling and measurement issues, ials, IEEE Trans. Electron Devices, Vol. 53, No. 9, pp. 2062-2081DOI
3 
K. Han, 2005, Complete high-frequency thermal noise modeling of short-channel MOSFETs and design of 5.2GHz low noise amplifier, IEEE J. Solid-State Circuits, Vol. 40, No. 3, pp. 726-734DOI
4 
K. Han, H. Shin, K. Lee, 2004, Analytical drain thermal noise current model valid for deep submicron MOSFETs, IEEE Trans. Electron Devices, Vol. 51, No. 2, pp. 261-269DOI
5 
S. Asgaran, et al, 2004, Analytical modeling of MOSFETs channel noise and noise parameters, IEEE Trans. Electron Devices, Vol. 51, No. 12, pp. 2109-2114DOI
6 
J. Jeon, Y. Kim, M. Kang, 2016, Investigation of the induced gate noise of nanoscale MOSFETs in the very frequency region, Semicond. Sci. Technol., Vol. 31, No. 6, pp. 065004Google Search
7 
J. Jeon, 2008, On the characteristics and spatial dependence of channel thermal noise in nanoscale metal oxide semi- conductor field effect transistors, Jpn. J. Appl. Phys., Vol. 47, No. 4, pp. 2636-2940Google Search
8 
J. Lee, 2003, Noise model of gate-leakage current in ultrathin oxide MOSFETs, IEEE Trans. Electron Devices, Vol. 50, No. 12, pp. 2499-2506DOI
9 
J. Lee, 2002, Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs, IEEE Trans. Elec- tron Devices, Vol. 49, No. 7, pp. 1232-1242DOI
10 
A. D. Huang, Z. Zhong, W. Wu, Y. X. Guo, 2016, An artificial neural network-based electrothermal model for GaN HEMTs with dynamic trapping effects consideration, IEEE Trans. Microw. Theory Techn., Vol. 64, No. 8, pp. 2519-2528DOI
11 
X. Li, J. Gao, G. Boeek, 2006, Microwave nonlinear device modeling by using an artificial neural network, Semicond. Sci. Technol., Vol. 21, No. 7, pp. 833-840Google Search
12 
J. Lee, 2003, Physics-guided neural modeling for low-dimensional thermoelectric module, IEEE Electron Device Lett., Vol. 40, No. 11, pp. 1812-1815DOI
13 
L. Zhang, M. Chan, 2017, Artificial neural network design for compact modeling of generic transistors, J. Comput. Electron., Vol. 16, No. , pp. 825-832DOI
14 
A. JarndalL, 2019, On neural network based electro- thermal modeling of GaN devices, IEEE Access, Vol. 7, pp. 94205-94214DOI
15 
Y. We, 2012, Using radial basis function networks for function approximation and classification, ISRN Appl. Math., Vol. 2012, pp. 1-34DOI