KIEE - The Transactions of the Korean Institute of Electrical Engineers

1

G. Greco, F. Iucolano, and F. Roccaforte, “Ohmic Contacts to Gallium Nitride Materials,” Appl. Surf. Sci., vol. 383, pp. 324-345, October 2016.

2

G. E. Ham, “Machine Learning Model for Ohmic Contacts in GaN Bipolar Devices,” KIEEME Annual Summer Conf. 2024, KIEEME, PD-42, 2024.

3

J. O. Song, J.-S. Ha, and T.-Y. Seong, “Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact,” IEEE Trans. Electron Devices, vol. 57, no. 1, pp. 42-59, December 2009.

4

C. Lu, H. Chen, X. Lv, X. Xie, and S. Noor Mohammad, “Temperature and Doping-dependent Resistivity of Ti/Au/Pd/Au Multilayer Ohmic Contact to n-GaN,” J. Appl. Phys., vol. 91, no. 11, pp. 9218-9224, June 2002.

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Q. Z. Liu and S. S. Lau, “A Review of the Metal–GaN Contact Technology,” Solid State Electron., vol. 42, no. 5, pp. 677-691, May 1998.

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P. Bogusl, E. L. Briggs, and J. Bernholc, “Native Defects in Gallium Nitride,” Phys. Rev. B, vol. 51, no. 23, pp. 17255-17258, June 1995.

7

S. Ruvimov, Z. Liliental-Weber, J. Washburn, K. J. Duxstad, E. E. Haller, Z.-F. Fan, S. N. Mohammad, W. Kim, A. E. Botchkarev, and H. Morkoç, “Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic Contacts for n‐GaN,” Appl. Phys. Lett., vol. 69, no. 11, pp. 1556-1558, September 1996.

8

S. Noor. Mohammad, “Contact Mechanisms and Design Principles for Alloyed Ohmic Contacts to n-GaN,” J. Appl. Phys., vol. 95, no. 12, pp. 7940-7953, June 2004.

9

Z. Wang, L. Li, and Y. Yao, “A Machine Learning-Assisted Model for GaN Ohmic Contacts Regarding the Fabrication Processes,” IEEE Trans. Electron Devices, vol. 68, no. 5, pp. 2212-2219, March 2021.

10

S. Shim, S. Choi, and Y. Shin, “Machine Learning (ML)-based Lithography Optimizations,” 2016 IEEE Asia Pacific Conference on Circuits and Systems, IEEE, pp. 530-533, 2016.

11

M. H. Kutner, C. J. Nachtsheim, J. Neter, and W. Li, “Applied Linear Statistical Models, 5th ed.,” McGraw-Hill Irwin, pp. 318, 1996.

12

K. Kim, M. Hua, D. Liu, J. Kim, K. J. Chen, and Z. Ma, “Efficiency Enhancement of InGaN/GaN Blue Light-emitting Diodes with Top Surface Deposition of AlN/Al2O3,” Nano Energy, vol. 43, pp. 259-269, January 2018.

13

K. Kim, and J. Jang, “Polarization-Charge Inversion at Al2O3/GaN Interfaces through Post-Deposition Annealing,” Electronics, vol. 9, no. 7, pp. 1068, July 2020.

14

K. Kim, and J. Jang, “Improving Ni/GaN Schottky Diode Performance through Interfacial Passivation Layer Formed via Ultraviolet/ozone Treatment,” Curr. Appl. Phys., vol. 20, no. 2, pp. 293-297, February 2020.

15

M. E. Lin, Z. Ma, F.Y. Huang, Z. F. Fan, L.H. Allen, and H. Morkoç, “Low Resistance Ohmic Contacts on Wide Band‐gap GaN,” Appl. Phys. Lett., vol. 64, no. 8, pp. 1003-1005, February 1994.

16

B. P. Luther, S.E. Mohney, T.N. Jackson, M.A. Khan, Q. Chen, and J.W. Yang, “Investigation of the Mechanism for Ohmic Contact Formation in Al and Ti/Al Contacts to n-type GaN,” Appl. Phys. Lett., vol. 70, no. 1, pp. 57-59, January 1997.

17

J. S. Kwak, S. E. Mohney, J. Y. Lin, and R. S. Kern, “Low Resistance Al/Ti/n-GaN Ohmic Contacts with Improved Surface Morphology and Thermal Stability,” Semicond. Sci. Technol., vol. 15, no. 7, pp. 756, July 2000.

18

V. Kumar, L. Zhou, D. Selvanathan, and I. Adesida, “Thermally-Stable Low-Resistance Ti/Al/Mo/Au Multilayer Ohmic Contacts on n-GaN,” J. Appl. Phys. vol. 92, no. 3, pp. 1712-1714, August 2002.

19

C. M. Pelto, Y. A. Chang, Y. Chen, and R. S. Williams, “Thermally Stable, Oxidation Resistant Capping Technology for Ti/Al Ohmic Contacts to n-GaN,” J. Appl. Phys., vol. 92, no. 8, pp. 4283-4289, October 2002.

20

A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, S. Noor Mohammad, “Electrical, Thermal, and Microstructural Characteristics of Ti/Al/Ti/Au Multilayer Ohmic Contacts to n-type GaN,” J. Appl. Phys., vol. 93, no. 2, pp. 1087-1094, January 2003.

21

A. Motayed, A. V. Davydov, W. J. Boettinger, D. Josell, A. J. Shapiro, I. Levin, T. Zheleva, and G. L. Harris, “Realization of Improved Metallization-Ti/Al/Ti/W/Au Ohmic Contacts to n-GaN for High Temperature Application,” Phys. Status Solidi (c), vol. 2, no. 7, pp. 2536-2539, April 2005.

22

L. Wang, F. M. Mohammed, and I. Adesida, “Characterization of Au and Al Segregation Layer in Post-Annealed Thin Ti/Al/Mo/Au Ohmic Contacts to n-GaN,” J. Appl. Phys., vol. 98, no. 10, pp. 106105, November 2005.

23

F. Iucolano, F. Roccaforte, a A. Alberti, C. Bongiorno, S. Di Franco, and V. Raineri, “Temperature Dependence of the Specific Resistance in Ti/Al/Ni/Au Contacts on n-Type GaN,” J. Appl. Phys., vol. 100, no. 12, pp. 123706, December 2006.

24

V. Rajagopal Reddy, and T.-Y. Seong, “Electrical and Structural Properties of Ti/W/Au Ohmic Contacts on n-type GaN,” Semicond. Sci. Technol., vol. 19, no. 8, p. 975, June 2004.

25

V. Rajagopal Reddy, and C. K. Ramesh, “Low-Resistance Ohmic Contacts to n-Type GaN using Ti/Al/Re/Au Multilayer Scheme,” J. Optoelectron. Adv. Mater., vol. 6, no. 1, pp. 177-182, March 2004.

26

A. Motayed, K. A. Jones, M. A. Derenge, M. C. Wood, D. N. Zakharov, Z. Liliental-Weber, D. J. Smith, A. V. Davydov, W. T. Anderson, A. A. Iliadis, and S. Noor Mohammad, “Electrical, Microstructural, and Thermal Stability Characteristics of Ta/Ti/Ni/Au Contacts to n-GaN,” J. Appl. Phys., vol. 95, no. 3, pp. 1516-1524, February 2004.

27

D.-Y. Shin, and Y.-R. Kim, “Comparison of Contact Resistivity Measurements of Silver Paste for a Silicon Solar Cell Using TLM and CTLM,” Trans. Korean Soc. Mech. Eng. B, vol. 38, no. 6, pp. 539-545, June 2014.

KIEEThe Transactions of
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KIEEThe Transactions ofthe Korean Institute of Electrical Engineers