• 대한전기학회
Mobile QR Code QR CODE : The Transactions of the Korean Institute of Electrical Engineers
  • COPE
  • kcse
  • 한국과학기술단체총연합회
  • 한국학술지인용색인
  • Scopus
  • crossref
  • orcid

References

1 
T. Kimoto and J. A. Cooper, “Fundamentals of Silicon Carbide Technology: Growth, Characterization,” Devices and Applications, John Wiley & Sons: Hoboken, NJ, USA, pp. 1-74, 2014. DOI:10.1002/9781118313534DOI
2 
T. Kimoto, J. Suda, Y. Yonezawa, K. Asano, K. Fukuda and H. Okumura, “Progress in ultrahigh-voltage SiC devices for future power infrastructure,” In Proceeding of the 2014 IEEE Int. Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp. 2.5.1–2.5.4, 2014. DOI:10.1109/IEDM.2014.7046967DOI
3 
L. Zhang, X. Yuan, X. Wu, C. Shi, J. Zhang and Y. Zhang, “Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules,” IEEE Trans. On Power Electronics, vol. 34, no.2, pp. 1181-1196, 2019. DOI:10.1109/TPEL.2018.2834345DOI
4 
S. Hazra, A. De, L. Cheng, J. Palmour, M. Schupbach, B. A. Hull, S. Allen and S. Bhattacharya, “High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications,” IEEE Trans. Power Electron., vol. 31, no. 7, pp. 4742-4754, 2016. DOI:10.1109/TPEL.2015.2432012DOI
5 
Z. Gu, M. Yang, Y. Yang, X, Liu, M. Gao and J. Qi, “Comparative Study on High-Temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-Integrated MOSFET,” IEEE Trans. On Power Electronics, vol. 39, no. 2, pp. 4187-4201, 2024. DOI:10.1109/TPEL.2023.3338487DOI
6 
A. Jafari, M. Nikoo, N. Perera, H. K. Yildirim, F. Karakaya, R. Soleimanzadeh and E. Matioli, “Comparison of Wide Band Gap Technologies for Soft-Switching Losses at High Frequencies,” IEEE Trans. Power Electron., vol. 35, no. 12, pp. 12595-12600, 2020. DOI:10.1109/TPEL.2020.2990628DOI
7 
B. J. Baliga, “Power semiconductor device figure of merit for high-frequency applications,” IEEE Electron Device Lett., vol. 10, no. 10, pp. 455-457, 1989. DOI:10.1109/55.43098DOI
8 
P. Vudumula, et al., “Design and optimization of 1.2 kV SiC planar inversion MOSFET using split dummy gate concept for high-frequency applications,” IEEE Trans. on Electron Devices, vol. 66, no. 12, pp. 5266-5271, 2019. DOI:10.1109/TED.2019.2949459DOI
9 
S. Harada, T. Mii, H. Sakane and M.Kato, “Suppression of Stacking Fault Expansion in a 4H-SiC Epitaxial Layer by Proton Irradiation,” Sci Rep., vol 12, no. 13542, 2022. DOI:10.1038/s41598-022-17060-yDOI
10 
M. Kato, S. Harada and H. Sakane, “Effects of proton implantation for expansion of basal plane dislocations in SiCtoward suppression of bipolar degradation: review and perspective,” Jpn. J. Appl. Phys, vol. 63, no. 2, pp.0208041-0208046, 2024. DOI:10.35848/1347-4065/ad1779DOI
11 
W. Sung and B. J. Baliga, “On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS diode (JBSFET),” IEEE Trans. on Industrial Electronics, vol. 64, no. 10, pp. 8206-8212, 2017. DOI:10.1109/TIE.2017.2696515DOI
12 
H. Yu, J. Wang, G. Deng, S. Liang, H. Liu and Z. J. Shen, “A Novel 4H-SiC JBS-Integrated MOSFET with Self-Pinching Structure for Improved Short-Circuit Capability,” IEEE Trans. Electron Devices, vol. 69, no. 9, pp. 5104-5109, 2022. DOI:10.1109/TED.2022.3192509DOI
13 
H. Yu, S. Liang, H. Liu, J. Wang and J. Shen, “Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode,” IEEE Trans. Electron Device, vol. 68, no. 9, pp. 4571-4576, 2021. DOI:10.1109/TED.2021.3097979DOI
14 
L. Tang, H. Jiang, J. Wei, Q. Hu, X. Zhong and X. Qi, “A Comparative Study of SiC MOSFETs with and without Integrated SBD,” Microelectronics J., vol. 128, no. 105576, 2022. DOI:10.1016/j.mejo.2022.105576DOI
15 
T. Tominaga, S. Hino, Y. Mitsui, J. Nakashima, K. Kawahara, S. Tomohisand N. Miura, “Superior Switching Characteristics of SiC-MOSFET Embedding SBD,” Proc. 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 27-30, 2019. DOI:10.1109/ISPSD.2019.8757664DOI
16 
D. Ueda, H. Takagi and G. Kano, “A new vertical double diffused MOSFET—The self-aligned terraced-gate MOSFET,” IEEE Trans. Electron Devices, vol. 31, no. 4, pp. 416-420, 1984. DOI:10.1109/T-ED.1984.21543DOI
17 
K. Han, B. J. Baliga and W. Sung, “A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results,” IEEE Electron Device Lett., vol. 39, no. 2, pp. 248-251, 2018. DOI:10.1109/LED.2017.2785771DOI
18 
W. Chen, B. Zhang and Z. Li, “Optimization of the VDMOSFET structure with reduced gate charge,” Semicond. Sci. Technol., vol. 22, no. 9, pp. 1033–1038, 2007. DOI:10.1088/0268-1242/22/9/010DOI
19 
S. Krishnaswami, M. Das, B. Hull, S. H. Ryu, J. Scofield, A. Agarwal and J. Palmour, “Gate oxide reliability of 4H-SiC MOS devices,” Proc. IEEE Int. Relib. Phys. Symp., San Jose, CA, USA, pp. 592-593, Apr. 2005. DOI:10.1109/RELPHY.2005.1493158DOI
20 
B. J. Baliga, “Fundamentals of Power Semiconductor Devices,” Springer, pp. 394-427, 2019. DOI:10.1007/978-0-387-47314-7DOI