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References

1 
X. Ding, M. Du, T. Zhou, H. Guo and C. Zhang, “Comprehensive comparison between silicon carbide MOSFETs and silicon IGBTs based traction systems for electric vehicles,” Appl. Energy, vol. 194, pp. 626-634, 2017. DOI:10.1016/j.apenergy.2016.05.059DOI
2 
J. Wang, “A Comparison between Si and SiC MOSFETs,” IOP Conf. Ser.: Mater. Sci. Eng., vol. 729, pp. 012005, 2020. DOI:10.1088/1757-899X/729/1/012005DOI
3 
T. Yin, C. Xu, L. Lin and K. Jing, “A SiC MOSFET and Si IGBT Hybrid Modular Multilevel Converter with Specialized Modulation Scheme,” IEEE Trans. Power Electron., vol. 35, no. 12, pp. 12623-12628, 2020. DOI:10.1109/TPEL.2020.2993366DOI
4 
P. Alexakis, O. Alatise, J. Hu, S. Jahdi, L. Ran and P. A. Mawby, “Improved Electrothermal Ruggedness in SiC MOSFETs Compared with Si IGBTs,” IEEE Trans. Electron Devices, vol. 61, no. 7, pp. 2278-2286, 2014. DOI:10.1109/TED.2014.2323152DOI
5 
S. Ji, Z. Zhang and F. Wang, “Overview of high voltage SiC power semiconductor devices: development and application,” CES Trans. Electr. Mach. Syst., vol. 1, no. 3, pp. 254-264, 2017. DOI:10.23919/TEMS.2017.8086104DOI
6 
S. Harada, Y. Kobayashi, S. Kyogoku, T. Morimoto, T. Tanaka, and M. Takei, “First demonstration of dynamic characteristics for SiC superjunction MOSFET realized using multi-epitaxial growth method,” Proc. IEEE Int. Electron Devices Meeting (IEDM), pp. 1-4, 2018. DOI:10.1109/IEDM.2018.8614670DOI
7 
R. Kosugi, Y. Sakuma, K. Kojima, S. Itoh, A. Nagata and T. Yatsuo, “First experimental demonstration of SiC super-junction (SJ) structure by multi-epitaxial growth method,” Proc. IEEE Int. Symp. Power Semicond. Devices ICs (ISPSD), pp. 1-4, 2014. DOI:10.1109/ISPSD.2014.6856047DOI
8 
T. Fukui, T. Ishii, T. Tawara, K. Takenaka and M. Kato, “Effects of ion implantation process on defect distribution in SiC SJ-MOSFET,” Jpn. J. Appl. Phys., vol. 62, pp. 016508, 2023. DOI:10.35848/1347-4065/acb0a2DOI
9 
N. Donato and F. Udrea, “Static and dynamic effects of the incomplete ionization in superjunction devices,” IEEE Trans. Electron Devices, vol. 65, no. 10, pp. 4469-4475, 2018. DOI:10.1109/TED.2018.2867058DOI