X. Li, X. Tong, R. Hu, Y. Wen, H. Zhu, X. Deng, Y. Sun, W. Chen, S. Bai, and B. Zhang,
“Failure Mechanism of Avalanche Condition for 1200‑V Double Trench SiC MOSFET,” IEEE
Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 2, pp. 2147‑2154,
2021.